Preparation of Semi-Insulating Material by Annealing Undoped InP
文献类型：期刊论文
| 作者 | Zhao Youwen ; Dong Hongwei ; Jiao Jinghua ; Zhao Jianqun ; Lin Lanying ; Sun Niefeng ; Sun Tongnian |
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:3页码:285-289 |
| 中文摘要 | semi-insulating (si) inp wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated czochralski (lec) inp at 930 ℃ for 80h. the annealing ambient can be pure phosphorus (pp) or iron phosphide (ip). the ip-si inp wafers have good electrical parameters and uniformity of whole wafer. however, pp-si inp wafers exhibit poor uniformity and electrical parameters, photoluminescence which is subtle to deep defect appears in ip-annealed semi-insulating inp. traps in annealed si inp are detected by the spectroscopy of photo-induced current transient. the results indicate that there are fewer traps in ip-annealed undoped si inp than those in as-grown fe-doped and pp-undoped si-undoped si inp. the formation mechanism of deep defects in annealed undoped inp is discussed. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18091]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao Youwen,Dong Hongwei,Jiao Jinghua,et al. Preparation of Semi-Insulating Material by Annealing Undoped InP[J]. 半导体学报,2002,23(3):285-289. |
| APA | Zhao Youwen.,Dong Hongwei.,Jiao Jinghua.,Zhao Jianqun.,Lin Lanying.,...&Sun Tongnian.(2002).Preparation of Semi-Insulating Material by Annealing Undoped InP.半导体学报,23(3),285-289. |
| MLA | Zhao Youwen,et al."Preparation of Semi-Insulating Material by Annealing Undoped InP".半导体学报 23.3(2002):285-289. |
入库方式： OAI收割
来源：半导体研究所
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