Tunnel Junction AlGaInP Light Emitting Diode
文献类型：期刊论文
| 作者 | Chen Lianghui ; Wei Xin
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:6页码:628-631 |
| 中文摘要 | the n-type gaas substrates are used and their conductive type is changed to p-type by tunnel junction for algainp light emitting diodes (tj-led), then n-type gap layer is used as current spreading layer. because resistivity of the n-type gap is lower than that of p-type, the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type gap current spreading layer. for tj-led with 3μm n-type gap current spreading layer, experimental results show that compared with conventional led with p-type gap current spreading layer, light output power is increased for 50% at 20ma and for 66.7% at 100ma. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18099]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Lianghui,Wei Xin. Tunnel Junction AlGaInP Light Emitting Diode[J]. 半导体学报,2002,23(6):628-631. |
| APA | Chen Lianghui,&Wei Xin.(2002).Tunnel Junction AlGaInP Light Emitting Diode.半导体学报,23(6),628-631. |
| MLA | Chen Lianghui,et al."Tunnel Junction AlGaInP Light Emitting Diode".半导体学报 23.6(2002):628-631. |
入库方式： OAI收割
来源：半导体研究所
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