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Growth of Cubic GaN by MOCVD at High Temperature
文献类型：期刊论文
| 作者 | Fu Yi ; Sun Yuanping ; Shen Xiaoming ; Li Shunfeng ; Feng Zhihong ; Duan Lihong ; Wang Hai ; Yang Hui |
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:2页码:120-123 |
| 中文摘要 | high quality cubic gan (c-gan) is grown by metalorganic vapor deposition (mocvd) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. the full width at half maximum (fwhm) of room temperature photoluminescence (pl) for the high temperature grown gan film is 48mev. it is smaller than that of the sample grown at 830 ℃. in x-ray diffraction (xrd) measurement, the high temperature grown gan shows a (002) peak at 20° with a fwhm of 21'. it can be concluded that, although c-gan is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. the relationship between the growth rate and growth temperature is also discussed. |
| 英文摘要 | high quality cubic gan (c-gan) is grown by metalorganic vapor deposition (mocvd) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. the full width at half maximum (fwhm) of room temperature photoluminescence (pl) for the high temperature grown gan film is 48mev. it is smaller than that of the sample grown at 830 ℃. in x-ray diffraction (xrd) measurement, the high temperature grown gan shows a (002) peak at 20° with a fwhm of 21'. it can be concluded that, although c-gan is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. the relationship between the growth rate and growth temperature is also discussed.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:08:32导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:08:32z (gmt). no. of bitstreams: 1 5115.pdf: 319606 bytes, checksum: 7eec57fd9c688361749e9eef7f2fcdca (md5) previous issue date: 2002; 国家自然科学基金; institute of semiconductors, the chinese academy of sciences |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18137]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fu Yi,Sun Yuanping,Shen Xiaoming,et al. Growth of Cubic GaN by MOCVD at High Temperature[J]. 半导体学报,2002,23(2):120-123. |
| APA | Fu Yi.,Sun Yuanping.,Shen Xiaoming.,Li Shunfeng.,Feng Zhihong.,...&Yang Hui.(2002).Growth of Cubic GaN by MOCVD at High Temperature.半导体学报,23(2),120-123. |
| MLA | Fu Yi,et al."Growth of Cubic GaN by MOCVD at High Temperature".半导体学报 23.2(2002):120-123. |
入库方式： OAI收割
来源：半导体研究所
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