Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor
文献类型：期刊论文
| 作者 | Wei Xin ; Chen Lianghui
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:6页码:565-570 |
| 中文摘要 | ganas alloy is grown by metalorganic chemical vapor deposition (mocvd) using dimethylhydrazine (dmhy) as the nitrogen precursor. high-resolution x-ray diffraction (hrxrd) and secondary ion mass spectrometry (sims) are combined in determining the nitrogen contents in the samples. room temperature photoluminescence (rtpl) measurement is also used in characterizing. the influence of different ga precursors on ganas quality is investigated. samples grown with triethylgallium (tega) have better qualities and less impurity contamination than those with trimethylgallium (tmga). nitrogen content of 5.688% is achieved with tega. the peak wavelength in rtpl measurement is measured to be 1278.5nm. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18139]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei Xin,Chen Lianghui. Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor[J]. 半导体学报,2002,23(6):565-570. |
| APA | Wei Xin,&Chen Lianghui.(2002).Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor.半导体学报,23(6),565-570. |
| MLA | Wei Xin,et al."Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor".半导体学报 23.6(2002):565-570. |
入库方式： OAI收割
来源：半导体研究所
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