Electrical Transport Properties of Annealed Undoped InP
文献类型：期刊论文
| 作者 | Zhao Youwen ; Luo Yilin ; Sun Niefeng ; S Fung ; Beling C D ; Sun Tongnian ; Lin Lanyin |
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:1页码:1-5 |
| 中文摘要 | the electrical properties of annealed undoped n-type inp are studied by temperature dependent hall effect (tdh) and current-voltage (i-v) measurements for semiconducting and semi-insulating samples, receptively. defect band conduction in annealed semiconducting inp can be observed from tdh measurement, which is similar to those of as-grown unintentionally doped inp with low carrier concentration and moderate compensation. the i-v curves of annealed undoped si inp exhibit ohmic property in the applied field region up to the onset of breakdown. such a result is different from that of as-grown fe-doped si inp which has a nonlinear region in i-v curve explained by the theory of space charge limited current. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 中国科学院半导体研究所材料中心科研发展基金资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18143]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao Youwen,Luo Yilin,Sun Niefeng,et al. Electrical Transport Properties of Annealed Undoped InP[J]. 半导体学报,2002,23(1):1-5. |
| APA | Zhao Youwen.,Luo Yilin.,Sun Niefeng.,S Fung.,Beling C D.,...&Lin Lanyin.(2002).Electrical Transport Properties of Annealed Undoped InP.半导体学报,23(1),1-5. |
| MLA | Zhao Youwen,et al."Electrical Transport Properties of Annealed Undoped InP".半导体学报 23.1(2002):1-5. |
入库方式： OAI收割
来源：半导体研究所
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