Opening a large band gap for graphene by covalent addition
文献类型：期刊论文
| 作者 | Gao XF(高兴发) ; 魏钟晴;Gao, XF; Wei, ZQ; Meunier, V; Sun, YY; Zhang, SBB
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| 刊名 | CHEMICAL PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 555页码:1-6 |
| 英文摘要 | Here we establish a fundamental principle to open a relatively large band gap for graphene by hydrogenation. Specifically, the large band gap can be obtained when the number of nonmagnetic sp(2)-substructures on graphene basal plane is maximized. The principle indicates unequivocally what additive patterning should be used to attain the largest band gap for a given addition coverage. According to this principle, the graphene band gap can be continuously tuned from 0 to 5.2 eV. These findings may open a door to create graphene-based nanosystems with desired band gaps, and will become a significant foundation for graphene nanotechnology applications. (C) 2012 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000313012200001 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223756]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Gao XF,魏钟晴；Gao, XF,Wei, ZQ,et al. Opening a large band gap for graphene by covalent addition[J]. CHEMICAL PHYSICS LETTERS,2013,555:1-6. |
| APA | 高兴发,魏钟晴；Gao, XF,Wei, ZQ,Meunier, V,Sun, YY,&Zhang, SBB.(2013).Opening a large band gap for graphene by covalent addition.CHEMICAL PHYSICS LETTERS,555,1-6. |
| MLA | 高兴发,et al."Opening a large band gap for graphene by covalent addition".CHEMICAL PHYSICS LETTERS 555(2013):1-6. |
入库方式： OAI收割
来源：高能物理研究所
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