Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si
文献类型：期刊论文
| 作者 | Li, BS; Zhang, CH; Wang, ZG; Zhong, YR; Wang, BY; Qin, XB; Zhang, LQ; Yang, YT; Wang, R; Jin, YF |
| 刊名 | VACUUM
 |
| 出版日期 | 2013 |
| 卷号 | 93页码:22-27 |
| 关键词 | Ion implantation Oxide precipitates Si-O stretching band Vacancy-type defects Microstructures |
| 英文摘要 | The effects of the processing conditions on the formation of buried oxide precipitates in He and O co-implanted Si were investigated by the combination of Fourier transform infrared (FTIR) absorption spectroscopy, depth-resolved positron annihilation Doppler spectroscopy, and transmission electron microscopy (TEM). Silicon wafers were implanted with 50 keV He ions at a fluence of 2 x 10(16) cm(-2) and subsequent 150 key O ions at a fluence of 2 x 10(17) cm(-2). For comparison, reference Si wafers were only implanted with 150 keV O ions. The Si-O-Si stretching frequency increases while the peak width of the Si-O-Si stretching absorption band decreases with an increase in annealing temperature. After the same annealing, the peak width of the Si-O-Si stretching absorption band in the He and O co-implanted sample is significantly larger than that in the reference sample. Two kinds of vacancy-type defects are observed by positrons, i.e., vacancy-type defects and vacancy-oxygen complexes. The characteristic S values of vacancy-type defects and vacancy-type complexes in the He and O co-implanted sample are smaller than those of the reference sample. In addition, the thickness of the buried oxide layer in the He and O co-implanted sample is smaller than that in the reference sample. After annealing at 1473 K, the O content is larger in the He and O co-implanted sample compared to that in the reference sample. (C) 2012 Elsevier Ltd. All rights reserved. |
| 学科主题 | Materials Science; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000316092900004 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223768]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Li, BS,Zhang, CH,Wang, ZG,et al. Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si[J]. VACUUM,2013,93:22-27. |
| APA | Li, BS.,Zhang, CH.,Wang, ZG.,Zhong, YR.,Wang, BY.,...&钟玉荣；王宝义；秦秀波.(2013).Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si.VACUUM,93,22-27. |
| MLA | Li, BS,et al."Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si".VACUUM 93(2013):22-27. |
入库方式： OAI收割
来源：高能物理研究所
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