Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing
文献类型：期刊论文
| 作者 | Yu RS(于润升) ; Yu, RS; Maekawa, M; Kawasuso, A; Wang, BY; Wei, L; Wang BY(王宝义); Wei L(魏龙)
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2012 |
| 卷号 | 270页码:47-49 |
| 关键词 | Positron annihilation Defects 4H-SiC |
| 英文摘要 | Positron annihilation in 800 key Ge+ implanted hexagonal SiC was studied by thermal annealing at temperatures ranging from 800 to 1400 degrees C. The variation in Doppler broadening S values as a function of the incident positron energy suggests a broad distribution in the depth of vacancy defects in the implanted samples. Increasing the annealing temperature triggers the accumulation of vacancies into vacancy clusters. After annealing at 1400 degrees C, defects in the deep region of SiC are eliminated, and Ge precipitation is believed to appear in the sample at the same time. Though Ge has a much more negative positron affinity than SiC, positron annihilation coincidence Doppler broadening measurement reveals that a preferential trapping of positrons in Ge seems impossible. (C) 2011 Elsevier B.V. All rights reserved. |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000298460200010 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223794]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Yu RS,Yu, RS,Maekawa, M,et al. Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,270:47-49. |
| APA | 于润升.,Yu, RS.,Maekawa, M.,Kawasuso, A.,Wang, BY.,...&魏龙.(2012).Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,270,47-49. |
| MLA | 于润升,et al."Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 270(2012):47-49. |
入库方式： OAI收割
来源：高能物理研究所
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