Suppression of oxygen vacancies in Be alloyed ZnO
文献类型：期刊论文
| 作者 | Chen, MM; Zhu, Y; Su, LX; Zhang, QL; Xiang, R; Gui, XC; Wu, TZ; Cao, XZ; Zhang, P; Wang, BY |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2013 |
| 卷号 | 577页码:179-182 |
| 关键词 | BeZnO alloys Oxide materials Crystal growth Oxygen vacancy Positron spectroscopies |
| 英文摘要 | We report the suppression of oxygen vacancies (O-v) defects in BeO alloyed ZnO films. The alloy films are grown by plasma-assisted MBE on the sapphire substrates with a designed buffer layer. The decreased formation of O-v with the increase of Be content in BeZnO alloys is confirmed by the X-ray photoelectron spectroscopy and positron annihilation spectroscopy measurements. Hall measurements show a "V" curve of the electron concentration and a flip-over "V" curve of the electron mobility as a function of Be content. The turning points of both curves are for the samples prepared at T-Be = 960 degrees C. The turning points imply that there is a narrow growth window for optimum electrical properties of the BeZnO alloys, where the background electron density is almost one order of magnitude lower than the others, while the mobility is four times higher. The results on electrical properties are also supported by high-resolution XRD. (C) 2013 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry; Materials Science; Metallurgy & Metallurgical Engineering |
| 收录类别 | SCI |
| WOS记录号 | WOS:000324082800029 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223884]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Chen, MM,Zhu, Y,Su, LX,et al. Suppression of oxygen vacancies in Be alloyed ZnO[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2013,577:179-182. |
| APA | Chen, MM.,Zhu, Y.,Su, LX.,Zhang, QL.,Xiang, R.,...&王宝义.(2013).Suppression of oxygen vacancies in Be alloyed ZnO.JOURNAL OF ALLOYS AND COMPOUNDS,577,179-182. |
| MLA | Chen, MM,et al."Suppression of oxygen vacancies in Be alloyed ZnO".JOURNAL OF ALLOYS AND COMPOUNDS 577(2013):179-182. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。