Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
文献类型：期刊论文
| ; | |
| 作者 | Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX |
| 刊名 | MATERIALS LETTERS
 ; MATERIALS LETTERS
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 68页码:327-330 |
| 关键词 | HVPE GaN CsCl Nano-island HVPE GaN CsCl Nano-island |
| DOI | 10.1016/j.matlet.2011.10.056 |
| 英文摘要 | Thick GaN films were overgrown by HVPE on nano-island templates, which was fabricated by inductively coupled plasma etching using self-assembled CsCl islands as etch masks. The truncated cone-shape nano-islands exhibited significant effects on improvement of crystalline quality and reduction of crack density for subsequent GaN growth. Photoluminescence and micro-Raman measurements showed improved optical properties and partial strain relaxation in the overgrown GaN when compared to that grown on as-grown template, originated from the initial selective growth. Compared to conventional epitaxial lateral overgrown GaN, the economic and rapid method would put forward new promising pathway to fabricate high quality GaN. (C) 2011 Elsevier B.V. All rights reserved.; Thick GaN films were overgrown by HVPE on nano-island templates, which was fabricated by inductively coupled plasma etching using self-assembled CsCl islands as etch masks. The truncated cone-shape nano-islands exhibited significant effects on improvement of crystalline quality and reduction of crack density for subsequent GaN growth. Photoluminescence and micro-Raman measurements showed improved optical properties and partial strain relaxation in the overgrown GaN when compared to that grown on as-grown template, originated from the initial selective growth. Compared to conventional epitaxial lateral overgrown GaN, the economic and rapid method would put forward new promising pathway to fabricate high quality GaN. (C) 2011 Elsevier B.V. All rights reserved. |
| 学科主题 | Materials Science; Physics ; Materials Science; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000300480600094 ; WOS:000300480600094 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223941]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Wei, TB,Chen, Y,Hu, Q,et al. Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres, Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres[J]. MATERIALS LETTERS, MATERIALS LETTERS,2012, 2012,68, 68:327-330, 327-330. |
| APA | Wei, TB.,Chen, Y.,Hu, Q.,Yang, JK.,Huo, ZQ.,...&伊福廷.(2012).Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres.MATERIALS LETTERS,68,327-330. |
| MLA | Wei, TB,et al."Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres".MATERIALS LETTERS 68(2012):327-330. |
入库方式： OAI收割
来源：高能物理研究所
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