Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy
文献类型：期刊论文
| ; | |
| 作者 | Zhong, J; Deng, JJ; Mao, BH; Xie, T; Sun, XH; Mou, ZG; Hong, CH; Yang, P; Wang, SD;洪才浩 |
| 刊名 | CARBON
 ; CARBON
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 50期号:1页码:335-338 |
| DOI | 10.1016/j.carbon.2011.08.046 |
| 英文摘要 | The evolution of solid state N-doping in graphene has been probed using X-ray absorption near-edge structure (XANES) spectroscopy. The XANES spectra show that the modification of graphene with N species can be achieved by urea attachment at annealing temperatures lower than 300 degrees C. A transition from urea to amino species is observed at 400 degrees C. At higher temperatures, pyridinic and graphitic type doping are achieved. The results indicate that the electronic structure of graphene can be controlled by solid state treatment, involving different N species depending on the annealing process. (C) 2011 Elsevier Ltd. All rights reserved.; The evolution of solid state N-doping in graphene has been probed using X-ray absorption near-edge structure (XANES) spectroscopy. The XANES spectra show that the modification of graphene with N species can be achieved by urea attachment at annealing temperatures lower than 300 degrees C. A transition from urea to amino species is observed at 400 degrees C. At higher temperatures, pyridinic and graphitic type doping are achieved. The results indicate that the electronic structure of graphene can be controlled by solid state treatment, involving different N species depending on the annealing process. (C) 2011 Elsevier Ltd. All rights reserved. |
| 学科主题 | Chemistry; Materials Science ; Chemistry; Materials Science |
| 收录类别 | SCI |
| WOS记录号 | WOS:000296548800042 ; WOS:000296548800042 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223945]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhong, J,Deng, JJ,Mao, BH,et al. Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy, Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy[J]. CARBON, CARBON,2012, 2012,50, 50(1):335-338, 335-338. |
| APA | Zhong, J.,Deng, JJ.,Mao, BH.,Xie, T.,Sun, XH.,...&Wang, SD；洪才浩.(2012).Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy.CARBON,50(1),335-338. |
| MLA | Zhong, J,et al."Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy".CARBON 50.1(2012):335-338. |
入库方式： OAI收割
来源：高能物理研究所
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