Positron annihilation Doppler broadening study of Xe-implanted aluminum
文献类型：期刊论文
| 作者 | Yu RS(于润升) ; Yu, RS; Maekawa, M; Kawasuso, A; Wang, BY; Wei, L;; Wang BY(王宝义); Wei L(魏龙)
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| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2013 |
| 卷号 | 282页码:724-728 |
| 关键词 | Positron annihilation Doppler broadening Vacancy Xenon |
| 英文摘要 | Positron annihilation Doppler broadening measurements were conducted to characterize information of defects in 380 keV Xe+-implanted aluminum upon thermal annealing at temperatures ranging from 100 to 600 degrees C. The results suggest a broad distribution in the depth of vacancy-type defects in all the as-implanted samples. Meanwhile, with an increase in implantation dose the defect-rich region shifts toward the sample surface. It was found that increasing the annealing temperature triggers surface-directed migration and coalescence of vacancy and XenVm clusters in samples with implantation doses of 1E15 and 1E16 Xe+ cm(-2). In the sample implanted with a high dose of 1E17 Xe+ cm(-2), positron annihilation revealed a decomposition and even elimination of such defects under post-implantation annealing treatment. (C) 2013 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry; Materials Science; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000322314800109 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224050]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Yu RS,Yu, RS,Maekawa, M,et al. Positron annihilation Doppler broadening study of Xe-implanted aluminum[J]. APPLIED SURFACE SCIENCE,2013,282:724-728. |
| APA | 于润升.,Yu, RS.,Maekawa, M.,Kawasuso, A.,Wang, BY.,...&魏龙.(2013).Positron annihilation Doppler broadening study of Xe-implanted aluminum.APPLIED SURFACE SCIENCE,282,724-728. |
| MLA | 于润升,et al."Positron annihilation Doppler broadening study of Xe-implanted aluminum".APPLIED SURFACE SCIENCE 282(2013):724-728. |
入库方式： OAI收割
来源：高能物理研究所
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