Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis
文献类型：期刊论文
| 作者 | Zhong, DG; Teng, B; Yu, ZH; He, LX; Wang, SH; Jiang, XJ; Ma, JT; Zhuang, SJ; Huang, WX; Huang WX(黄万霞)
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| 刊名 | CRYSTAL RESEARCH AND TECHNOLOGY
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| 出版日期 | 2012 |
| 卷号 | 47期号:10页码:1083-1087 |
| 关键词 | KDP crystal profiling growth X-ray topography defects |
| 英文摘要 | Potassium dihydrogen phosphate (KDP) crystals were restrained to grow in two dimensions only, using a specially designed platform. This enables us to grow the blanks of frequency conversion elements that satisfy type-II phase matching direction out of a type-II phase-matched seed crystal. Synchrotron radiation topography was used to study the growth mechanism of these profiling grown KDP crystals. It is found that both dislocation growth mechanism and layer growth mechanism were involved in the growing process. Inclusions, growth striations and dislocations were the main defects that influenced the crystalline quality of these crystals. High-resolution X-ray diffraction was employed to study the lattice integrality of the crystal. |
| 学科主题 | Crystallography |
| 收录类别 | SCI |
| WOS记录号 | WOS:000309397800011 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224105]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhong, DG,Teng, B,Yu, ZH,et al. Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2012,47(10):1083-1087. |
| APA | Zhong, DG.,Teng, B.,Yu, ZH.,He, LX.,Wang, SH.,...&黄万霞.(2012).Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis.CRYSTAL RESEARCH AND TECHNOLOGY,47(10),1083-1087. |
| MLA | Zhong, DG,et al."Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis".CRYSTAL RESEARCH AND TECHNOLOGY 47.10(2012):1083-1087. |
入库方式： OAI收割
来源：高能物理研究所
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