中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of microstructures and optical properties in Mn-doped SiC films

文献类型:期刊论文

作者An, YK; Duan, LS; Li, X; Wu, ZH; Liu, JW;吴忠华
刊名APPLIED SURFACE SCIENCE
出版日期2012
卷号258期号:18页码:7070-7074
关键词SiC film Mn-doped Microstructures Photoluminescence
英文摘要Mn-doped SiC films were prepared on Si(1 0 0) substrates by RF-magnetron sputtering technique. The microstructures and composition of films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The XRD results show that the Mn-doped SiC films form a 3C-SiC crystal structure and some doped Mn atoms occupy the C sites of SiC lattice. The XPS results suggest that there exist Si-C, C-C and Si-Mn bonds in the films, but the signal of Si-C bond decreases and that of C-C bond increases with the increase of Mn concentration. The Mn K-edge XANES and EXAFS measurements show that the majority of Mn atoms form Mn4Si7 secondary phase compounds and the existence of Mn metal and MnO can be safely excluded. Then the photoluminescence (PL) properties of films are observed at room temperature. The origin of 413-nm PL peak is associated with C cluster centers, which obviously correlates with the Mn-doped concentration. (C) 2012 Elsevier B.V. All rights reserved.
学科主题Chemistry; Materials Science; Physics
收录类别SCI
WOS记录号WOS:000304004100055
公开日期2016-05-03
源URL[http://ir.ihep.ac.cn/handle/311005/224289]  
专题高能物理研究所_多学科研究中心
推荐引用方式
GB/T 7714
An, YK,Duan, LS,Li, X,et al. Investigation of microstructures and optical properties in Mn-doped SiC films[J]. APPLIED SURFACE SCIENCE,2012,258(18):7070-7074.
APA An, YK,Duan, LS,Li, X,Wu, ZH,&Liu, JW;吴忠华.(2012).Investigation of microstructures and optical properties in Mn-doped SiC films.APPLIED SURFACE SCIENCE,258(18),7070-7074.
MLA An, YK,et al."Investigation of microstructures and optical properties in Mn-doped SiC films".APPLIED SURFACE SCIENCE 258.18(2012):7070-7074.

入库方式: OAI收割

来源:高能物理研究所

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