Lanthanum-doped ZnO quantum dots with greatly enhanced fluorescent quantum yield
文献类型:期刊论文
| 作者 | Sun, LW; Shi, HQ; Li, WN; Xiao, HM; Fu, SY; Cao, XZ; Li, ZX;曹兴忠; Li ZX(李卓昕)
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| 刊名 | JOURNAL OF MATERIALS CHEMISTRY
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| 出版日期 | 2012 |
| 卷号 | 22期号:17页码:8221-8227 |
| 英文摘要 | The lanthanum-doped ZnO quantum dots (QDs) are synthesized by a modified sol-gel method under atmospheric conditions. The as-prepared quantum dots are characterized by X-ray powder diffraction, energy dispersion spectrum analysis and high resolution transmission electron microscopy. The optical properties of the products are studied by ultra-violet spectroscopy and fluorescent spectroscopy. The results show that the doped quantum dots exhibit greatly enhanced luminescent properties and their quantum yield centered around 495 nm is increased from 30.5% for un-doped ZnO QDs already improved by silane surface modification to 77.9% for La-doped ZnO QDs at a proper La-doping content, which is the highest reported so far for the green-emitting ZnO QDs. Positron annihilation spectroscopy is employed to probe the vacancy-type defects of ZnO QDs. Finally, anti-counterfeiting inks are prepared by incorporating La-doped ZnO QDs into the transparent oil and their possible potential applications are explored. |
| 学科主题 | Chemistry; Materials Science |
| 收录类别 | SCI |
| WOS记录号 | WOS:000302367500009 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224306] ![]() |
| 专题 | 高能物理研究所_核技术应用研究中心 |
| 推荐引用方式 GB/T 7714 | Sun, LW,Shi, HQ,Li, WN,et al. Lanthanum-doped ZnO quantum dots with greatly enhanced fluorescent quantum yield[J]. JOURNAL OF MATERIALS CHEMISTRY,2012,22(17):8221-8227. |
| APA | Sun, LW.,Shi, HQ.,Li, WN.,Xiao, HM.,Fu, SY.,...&李卓昕.(2012).Lanthanum-doped ZnO quantum dots with greatly enhanced fluorescent quantum yield.JOURNAL OF MATERIALS CHEMISTRY,22(17),8221-8227. |
| MLA | Sun, LW,et al."Lanthanum-doped ZnO quantum dots with greatly enhanced fluorescent quantum yield".JOURNAL OF MATERIALS CHEMISTRY 22.17(2012):8221-8227. |
入库方式: OAI收割
来源:高能物理研究所
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