Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching
文献类型：期刊论文
| 作者 | Liu J(刘静) ; Liu, J; Wang B(王波); 伊福廷;Ashmkhan, M; Wang, B; Yi, FT
|
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2012 |
| 卷号 | 258期号:22页码:8825-8830 |
| 关键词 | Nanoislands Nanopillars Etching time Reflectance |
| 英文摘要 | Cesium chloride (CsCl) self-assembly has been successfully used to fabricate different average diameter CsCl nanoislands ranging from 50 nm to 1 mu m through controlling CsCl film thickness, relative humidity and developing time. By process control of inductively coupled plasma (ICP) etching, the silicon nanopillars with different high aspect ratio (2-6), morphologies from column to cone, and diameters from 150 to 800 nm have been made by dry etching with the structure mask of CsCl nano hemispheres. The reflectivity of the silicon nanopillars has also been measured for wavelength from 400 to 1000 nm and shows the best antireflection under 5% by native silicon nanopillars with 200 nm average diameter after 40 min ICP etching. With a layer of SiO2 on silicon nanopillars by thermal oxidation process, the reflectivity reaches to below 2.5% at a large range of wavelength from 400 to 1000 nm. (C) 2012 Elsevier B. V. All rights reserved. |
| 学科主题 | Chemistry; Materials Science; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000306134900065 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224312]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Liu J,Liu, J,Wang B,et al. Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching[J]. APPLIED SURFACE SCIENCE,2012,258(22):8825-8830. |
| APA | 刘静,Liu, J,王波,伊福廷；Ashmkhan, M,Wang, B,&Yi, FT.(2012).Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching.APPLIED SURFACE SCIENCE,258(22),8825-8830. |
| MLA | 刘静,et al."Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching".APPLIED SURFACE SCIENCE 258.22(2012):8825-8830. |
入库方式： OAI收割
来源：高能物理研究所
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