Effects of oxygen vacancy on the electronic structure and multiferroics in sol-gel derived Pb0.8Co0.2TiO3 thin films
文献类型：期刊论文
| 作者 | Zhao, HQ; Wang JO(王嘉欧); Wang, JO; Zhang, LX; Rong, YC; Chen, J; Ibrahim, K; Xing, XR; Kui RX(奎热西)
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| 刊名 | DALTON TRANSACTIONS
 |
| 出版日期 | 2013 |
| 卷号 | 42期号:28页码:10358-10364 |
| 英文摘要 | The single phase Pb0.8Co0.2TiO3 thin films were synthesized on a Pt/Ti/SiO2/Si substrate by the sol-gel route. The present films exhibited homogeneous microstructure with low porosity. O 1s X-ray photoelectron spectroscopy (XPS) was used to detect the amount of oxygen vacancies. The ferroelectric measurements showed that the ferroelectricity deteriorates with the increase in the number of oxygen vacancies. X-ray absorption spectroscopy (XAS) and XPS were used to study the electronic structure. The results indicated that the decreased ferroelectricity might be ascribed to the weakened hybridization between O 2p and Pb 6s and Ti 3d orbitals. The ferromagnetic behaviors were also observed in the thin films and saturated magnetization raised monotonously with the oxygen vacancy rising due to the enhanced F-center exchange interaction. Magnetoelectric coupling of the films weakened with oxygen vacancy increase. |
| 学科主题 | Chemistry |
| 收录类别 | SCI |
| WOS记录号 | WOS:000320874600034 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224321]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhao, HQ,Wang JO,Wang, JO,et al. Effects of oxygen vacancy on the electronic structure and multiferroics in sol-gel derived Pb0.8Co0.2TiO3 thin films[J]. DALTON TRANSACTIONS,2013,42(28):10358-10364. |
| APA | Zhao, HQ.,王嘉欧.,Wang, JO.,Zhang, LX.,Rong, YC.,...&奎热西.(2013).Effects of oxygen vacancy on the electronic structure and multiferroics in sol-gel derived Pb0.8Co0.2TiO3 thin films.DALTON TRANSACTIONS,42(28),10358-10364. |
| MLA | Zhao, HQ,et al."Effects of oxygen vacancy on the electronic structure and multiferroics in sol-gel derived Pb0.8Co0.2TiO3 thin films".DALTON TRANSACTIONS 42.28(2013):10358-10364. |
入库方式： OAI收割
来源：高能物理研究所
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