Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface
文献类型：期刊论文
| 作者 | Sun, B; Zhao, LX; Wei, TB; Yi, XY; Liu, ZQ; Wang, GH; Li, JM; Yi, FT;伊福廷 |
| 刊名 | OPTICS EXPRESS
 |
| 出版日期 | 2012 |
| 卷号 | 20期号:17页码:18537-18544 |
| 英文摘要 | InGaN flip-chip light-emitting diodes on bulk GaN substrate (FS-FCLEDs) with hemisphere-cones-hybrid surface were fabricated using both dry etching with CsCl nanoislands as mask and chemical wet etching. Compared with the corresponding flat LEDs, the light output power of FS-FCLEDs with combined nanostructures shows an enhancement factor of 1.9 at 350mA injection current. Finite-difference time-domain (FDTD) simulation results show that such enhancement of the output power is mainly attributed to the reduction of the total internal reflection and increase of the light scattering probability in the hemisphere-cones-hybrid surface, which is due to a combination effect of light diffraction at the nanocones edges, and light interference within the hemisphere and nanocones. (C) 2012 Optical Society of America |
| 学科主题 | Optics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000307873600002 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224359]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Sun, B,Zhao, LX,Wei, TB,et al. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface[J]. OPTICS EXPRESS,2012,20(17):18537-18544. |
| APA | Sun, B.,Zhao, LX.,Wei, TB.,Yi, XY.,Liu, ZQ.,...&Yi, FT；伊福廷.(2012).Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.OPTICS EXPRESS,20(17),18537-18544. |
| MLA | Sun, B,et al."Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface".OPTICS EXPRESS 20.17(2012):18537-18544. |
入库方式： OAI收割
来源：高能物理研究所
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