Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains
文献类型：期刊论文
| 作者 | Fan, LL; Wu, YF; Si C(姒程); Si, C; Pan, GQ; Zou, CW; Wu, ZY;吴自玉 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 102期号:1页码:11604 |
| 英文摘要 | The growth behavior of VO2 crystal film deposited on Al2O3 (0001) monocrystalline substrate by pulsed laser deposition was investigated by high-resolution synchrotron radiation X-ray diffraction (XRD). phi-scan XRD confirmed the in-plane epitaxial matching relation. Furthermore, fine structures observed in the phi-scan indicated that each main peak contained two additional satellites in both the inclined (220) plane and some other vertical planes. A growth model for this observation was proposed based on the intrinsic multi-domain growth of the VO2 crystal at the interface. This observation will give some insights in VO2 epitaxial growth on the hexagonal substrate system. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775580] |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000313646500041 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224472]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Fan, LL,Wu, YF,Si C,et al. Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains[J]. APPLIED PHYSICS LETTERS,2013,102(1):11604. |
| APA | Fan, LL.,Wu, YF.,姒程.,Si, C.,Pan, GQ.,...&Wu, ZY；吴自玉.(2013).Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains.APPLIED PHYSICS LETTERS,102(1),11604. |
| MLA | Fan, LL,et al."Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains".APPLIED PHYSICS LETTERS 102.1(2013):11604. |
入库方式： OAI收割
来源：高能物理研究所
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