Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films
文献类型：期刊论文
| 作者 | Zhan, P; Wang, WP; Xie, Z; Li, ZC; Zhang, ZJ; Zhang, P; Wang, BY; Cao, XZ; 张鹏(正); Wang BY(王宝义)
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2012 |
| 卷号 | 101期号:3页码:31913 |
| 英文摘要 | Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as similar to 0.55 mu(B)/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from similar to 0.44 emu/g (on quartz) to similar to 1.18 emu/g (on silicon) after annealing at 600 degrees C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737881] |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000306748000034 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224520]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhan, P,Wang, WP,Xie, Z,et al. Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films[J]. APPLIED PHYSICS LETTERS,2012,101(3):31913. |
| APA | Zhan, P.,Wang, WP.,Xie, Z.,Li, ZC.,Zhang, ZJ.,...&曹兴忠.(2012).Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films.APPLIED PHYSICS LETTERS,101(3),31913. |
| MLA | Zhan, P,et al."Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films".APPLIED PHYSICS LETTERS 101.3(2012):31913. |
入库方式： OAI收割
来源：高能物理研究所
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