Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films
文献类型：期刊论文
| 作者 | Zhan, P; Wang, WP; Liu, C; Hu, Y; Li, ZC; Zhang, ZJ; Zhang, P; Wang, BY; Cao, XZ; 张鹏(正) |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 111期号:3页码:33501 |
| 英文摘要 | ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679560] |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000301029800017 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224524]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhan, P,Wang, WP,Liu, C,et al. Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films[J]. JOURNAL OF APPLIED PHYSICS,2012,111(3):33501. |
| APA | Zhan, P.,Wang, WP.,Liu, C.,Hu, Y.,Li, ZC.,...&曹兴忠.(2012).Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films.JOURNAL OF APPLIED PHYSICS,111(3),33501. |
| MLA | Zhan, P,et al."Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films".JOURNAL OF APPLIED PHYSICS 111.3(2012):33501. |
入库方式： OAI收割
来源：高能物理研究所
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