Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method
文献类型:期刊论文
作者 | Wu, YF; Fan, LL; Chen, SM; Chen, S; Zou, CW; Wu, ZY;吴自玉 |
刊名 | AIP ADVANCES
![]() |
出版日期 | 2013 |
卷号 | 3期号:4页码:42132 |
关键词 | aluminium compounds annealing metal-insulator transition Raman spectra semiconductor thin films sol-gel processing vanadium compounds X-ray absorption spectra X-ray diffraction |
英文摘要 | VO2 thin films with large-area were prepared on Al2O3 substrates by a simple sol-gel method. After an annealing treatment under low vacuum condition, all the VO2 films showed a preferred growth direction and exhibited excellent semiconductor-metal transition (SMT) characteristics. The structure and electrical properties of the obtained VO2 films were investigated systematically. Raman spectra, X-ray diffraction and X-ray absorption spectra measurements pointed out that the VO2 film on Al2O3(10 (1) over bar0) substrate showed a M1 phase instead of M2 phase as reported in previous studies. Based on the experiment results, it was suggested that the strained structure of oriented VO2 films could be a mechanism for the formation of the intermediate M2 phase, whereas it is difficult to access the pure M2 phase of undoped VO2 films. VO2 film on Al2O3 (10 (1) over bar0) substrate showed a lower SMT temperature compared to VO2 film on Al2O3 (0001), which can be mostly attributed to the differences of both lattice mismatch and thermal stress. The present results confirm and make clear the relevance of the substrate orientation in the growth of VO2 film and their different contributions to the SMT characteristics in vanadate systems. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4802981] |
学科主题 | Science & Technology - Other Topics; Materials Science; Physics |
收录类别 | SCI |
WOS记录号 | WOS:000318271100032 |
公开日期 | 2016-05-03 |
源URL | [http://ir.ihep.ac.cn/handle/311005/224544] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
推荐引用方式 GB/T 7714 | Wu, YF,Fan, LL,Chen, SM,et al. Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method[J]. AIP ADVANCES,2013,3(4):42132. |
APA | Wu, YF,Fan, LL,Chen, SM,Chen, S,Zou, CW,&Wu, ZY;吴自玉.(2013).Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method.AIP ADVANCES,3(4),42132. |
MLA | Wu, YF,et al."Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method".AIP ADVANCES 3.4(2013):42132. |
入库方式: OAI收割
来源:高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。