In situ electronic structural study of VO2 thin film across the metal-insulator transition
文献类型：期刊论文
| 作者 | Mai MT(买买提); 阿布来提; Wu R(吴蕊) ; Wang JO(王嘉欧); Muhemmed, E; Ablat, A; Wu, R; Wang, JO; Qian, HJ; Ibrahim, K;
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:12页码:127103 |
| 关键词 | vanadium dioxide metal-insulator transition electronic structure photoemission spectroscopy |
| 英文摘要 | The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V L-II-L-III edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal-insulator transition (MIT) temperature (T-MIT = 67 degrees C). The spectra show evidence for changes in the electronic structure depending on temperature. Across the T-MIT, pure V 3d characteristic d(parallel to) and O 2p-V 3d hybridization characteristic pi(pd), sigma(pd) bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V L-III-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator-semiconductor, semiconductor-metal processes, and vice versa. The conventional MIT at around the T-MIT = 67 degrees C is actually a semiconductor-insulator transformation point. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000329565500060 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224644]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Mai MT,阿布来提,Wu R,et al. In situ electronic structural study of VO2 thin film across the metal-insulator transition[J]. CHINESE PHYSICS B,2013,22(12):127103. |
| APA | 买买提.,阿布来提.,吴蕊.,王嘉欧.,Muhemmed, E.,...&奎热西.(2013).In situ electronic structural study of VO2 thin film across the metal-insulator transition.CHINESE PHYSICS B,22(12),127103. |
| MLA | 买买提,et al."In situ electronic structural study of VO2 thin film across the metal-insulator transition".CHINESE PHYSICS B 22.12(2013):127103. |
入库方式： OAI收割
来源：高能物理研究所
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