Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy
文献类型：期刊论文
| 作者 | Fan, LL; Chen, S; Wu, YF; Chen, FH; Chu, WS; Chen, X; Zou, CW; Wu, ZY;吴自玉 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 103期号:13页码:131914 |
| 英文摘要 | VO2 epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al2O3 (0001) substrate. The VO2 film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO2 film is discussed in the framework of the hybridization theory and the valence state of vanadium. (C) 2013 AIP Publishing LLC. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000325284500035 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224646]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Fan, LL,Chen, S,Wu, YF,et al. Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2013,103(13):131914. |
| APA | Fan, LL.,Chen, S.,Wu, YF.,Chen, FH.,Chu, WS.,...&Wu, ZY；吴自玉.(2013).Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy.APPLIED PHYSICS LETTERS,103(13),131914. |
| MLA | Fan, LL,et al."Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy".APPLIED PHYSICS LETTERS 103.13(2013):131914. |
入库方式： OAI收割
来源：高能物理研究所
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