Fe-doped InN layers grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wang, XQ; Liu, ST; Ma, DY; Zheng, XT; Chen, G; Xu, FJ; Tang, N; Shen, B; Zhang, P; Cao, XZ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 101期号:17页码:171905 |
| 英文摘要 | Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764013] |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000310726200028 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224662]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wang, XQ,Liu, ST,Ma, DY,et al. Fe-doped InN layers grown by molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2012,101(17):171905. |
| APA | Wang, XQ.,Liu, ST.,Ma, DY.,Zheng, XT.,Chen, G.,...&王宝义.(2012).Fe-doped InN layers grown by molecular beam epitaxy.APPLIED PHYSICS LETTERS,101(17),171905. |
| MLA | Wang, XQ,et al."Fe-doped InN layers grown by molecular beam epitaxy".APPLIED PHYSICS LETTERS 101.17(2012):171905. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。