Interfacial Bonding and Structure of Bi2Te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering
文献类型：期刊论文
| 作者 | Liu, Y; 王焕华;Wang, HH; Bian, G; Zhang, Z; Lee, SS; Fenter, PA; Tischler, JZ; Hong, H; Chiang, TC |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 110期号:22页码:226103 |
| 英文摘要 | Interfacial topological states are a key element of interest for topological insulator thin films, and their properties can depend sensitively on the atomic bonding configuration. We employ in situ nonresonant and resonant surface x-ray scattering to study the interfacial and internal structure of a prototypical topological film system: Bi2Te3 grown on Si(111). The results reveal a Te-dominated buffer layer, a large interfacial spacing, and a slightly relaxed and partially strained bottom quintuple layer of an otherwise properly stacked bulklike Bi2Te3 film. The presence of the buffer layer indicates a nontrivial process of interface formation and a mechanism for electronic decoupling between the topological film and the Si(111) substrate. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000319738400008 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224676]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Liu, Y,王焕华；Wang, HH,Bian, G,et al. Interfacial Bonding and Structure of Bi2Te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering[J]. PHYSICAL REVIEW LETTERS,2013,110(22):226103. |
| APA | Liu, Y.,王焕华；Wang, HH.,Bian, G.,Zhang, Z.,Lee, SS.,...&Chiang, TC.(2013).Interfacial Bonding and Structure of Bi2Te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering.PHYSICAL REVIEW LETTERS,110(22),226103. |
| MLA | Liu, Y,et al."Interfacial Bonding and Structure of Bi2Te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering".PHYSICAL REVIEW LETTERS 110.22(2013):226103. |
入库方式： OAI收割
来源：高能物理研究所
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