Local structure and p-d hybridization of Mn-doped In2O3 films
文献类型：期刊论文
| 作者 | An, YK; Feng, DQ; Duan, LS; Wu, ZH; Liu, JW;吴忠华 |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 45期号:29页码:295304 |
| 英文摘要 | Mn-doped In2O3 films were deposited on Si (1 0 0) substrates by the RF-magnetron sputtering technique. The influence of Mn-doping concentration on the local structure and degree of p-d hybridization was investigated by x-ray absorption spectroscopy at the Mn K-edge and L-2,L-3-edge. The results show that Mn ions dissolve in In2O3 and substitute for In3+ sites in the +2 valence states. With the increase in Mn-doping concentration, the Mn-O bonding distance increases monotonically, but integrated intensities of L-2,L-3 edges increase first and then decrease. It can be concluded that there exists an optimal Mn-O bonding distance for the transition probabilities from the 2p state to the p-d hybridization state, which results in increasing degree of p-d hybridization. So the Mn-doping concentration has a significant effect on the local structure and degree of p-d hybridization in Mn-doped In2O3 films. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000306118900008 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224681]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | An, YK,Feng, DQ,Duan, LS,et al. Local structure and p-d hybridization of Mn-doped In2O3 films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2012,45(29):295304. |
| APA | An, YK,Feng, DQ,Duan, LS,Wu, ZH,&Liu, JW；吴忠华.(2012).Local structure and p-d hybridization of Mn-doped In2O3 films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,45(29),295304. |
| MLA | An, YK,et al."Local structure and p-d hybridization of Mn-doped In2O3 films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 45.29(2012):295304. |
入库方式： OAI收割
来源：高能物理研究所
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