Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature
文献类型：期刊论文
| 作者 | Tao, P; Huang, L; Cheng, HH; Wang, HH; Wu, XS;王焕华 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2014 |
| 卷号 | 23期号:8页码:88112 |
| 关键词 | GeSn films high resolution X-ray diffraction fully-strained Raman measurements |
| 英文摘要 | We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000343875300092 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224900]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Tao, P,Huang, L,Cheng, HH,et al. Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature[J]. CHINESE PHYSICS B,2014,23(8):88112. |
| APA | Tao, P,Huang, L,Cheng, HH,Wang, HH,&Wu, XS；王焕华.(2014).Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature.CHINESE PHYSICS B,23(8),88112. |
| MLA | Tao, P,et al."Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature".CHINESE PHYSICS B 23.8(2014):88112. |
入库方式： OAI收割
来源：高能物理研究所
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