Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Liu J(刘静) ; Wang JO(王嘉鸥); Yi FT(伊福廷); Liu, J; Wang, JO; Yi, FT; Wu, R; Zhang, N; Kurash, I; Wu R(吴蕊)
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2014 |
| 卷号 | 23期号:9页码:96101 |
| 关键词 | X-ray photoelectron spectroscopy (XPS) photoelectric characteristic P-N junction silicon nanopillar |
| 英文摘要 | Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl3) at 870 degrees C to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000344057200048 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224902]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Liu J,Wang JO,Yi FT,et al. Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy[J]. CHINESE PHYSICS B,2014,23(9):96101. |
| APA | 刘静.,王嘉鸥.,伊福廷.,Liu, J.,Wang, JO.,...&奎热西.(2014).Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy.CHINESE PHYSICS B,23(9),96101. |
| MLA | 刘静,et al."Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy".CHINESE PHYSICS B 23.9(2014):96101. |
入库方式： OAI收割
来源：高能物理研究所
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