Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Xing HY(邢海英) ; Xing, HY; 崔明启;Xu, ZC; Cui, MQ; Xie, YX; Zhang, GY
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2014 |
| 卷号 | 23期号:10页码:107803 |
| 关键词 | GaMnN photoluminescence magnetism metal-organic chemical vapor deposition |
| 英文摘要 | Metal-organic chemical vapor deposition (MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence (PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% ([Mn](A) = 0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t(2) state of the neutral Mn3+ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000344057600088 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224903]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xing HY,Xing, HY,崔明启；Xu, ZC,et al. Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition[J]. CHINESE PHYSICS B,2014,23(10):107803. |
| APA | 邢海英,Xing, HY,崔明启；Xu, ZC,Cui, MQ,Xie, YX,&Zhang, GY.(2014).Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition.CHINESE PHYSICS B,23(10),107803. |
| MLA | 邢海英,et al."Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition".CHINESE PHYSICS B 23.10(2014):107803. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。