Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation
文献类型：期刊论文
| 作者 | Ding, LL; Guo, HX; Chen, W; Yao, ZB; Yan, YH; Chen, DL; Paccagnella, A; Gerardin, S; Bagatin, M; Chen, L |
| 刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
 |
| 出版日期 | 2014 |
| 卷号 | 61期号:4页码:1777-1784 |
| 关键词 | Failure modes focused synchrotron x-ray irradiation SRAM-based FPGA total ionizing dose effect |
| 英文摘要 | This study investigates the total ionizing dose effect in static random access memory (SRAM)-based field programmable gate array (FPGA). In addition to gamma ray whole-chip irradiation, focused synchrotron x-ray irradiation with beam size of 20 mu m is also used. As a result, the most vulnerable inner circuit in the SRAM-based FPGA is determined directly. Circuit simulation is also executed to understand the failure phenomenon further. The simulated results are consistent with the experimental results. |
| 学科主题 | Engineering; Nuclear Science & Technology |
| 收录类别 | SCI |
| WOS记录号 | WOS:000343928100039 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225028]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Ding, LL,Guo, HX,Chen, W,et al. Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2014,61(4):1777-1784. |
| APA | Ding, LL.,Guo, HX.,Chen, W.,Yao, ZB.,Yan, YH.,...&Fan, RY；陈栋梁.(2014).Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,61(4),1777-1784. |
| MLA | Ding, LL,et al."Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 61.4(2014):1777-1784. |
入库方式： OAI收割
来源：高能物理研究所
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