Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films
文献类型：期刊论文
| 作者 | Zhang, WH; Wang, K; Fan, LL; Liu, LY; Guo, PP; Zou, CW; Wang, JO; Qian, HJ; Ibrahim, K; Yan, WS |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2014 |
| 卷号 | 118期号:24页码:12837-12844 |
| 英文摘要 | The coupling of doped charge carriers with the crystal lattice is an efficient route to modulate the phase transition behavior of VO2. In the current work, the N-incorporated VO2 samples are prepared through the low-energy N-2(+) ion sputtering of the crystalline VO2 films. The critical temperatures (T-c) of the metal-insulator transition (MIT) process are observed to decrease with a value of similar to 18 degrees C for VO1.9N0.1 and VO1.87N0.13 samples. The effects of nitrogen incorporation on the MIT depression have been revealed by the electronic structural characterizations via the X-ray adsorption near-edge structure (XANES) spectroscopy and photon electronic spectroscopy (SRPES). The implanted nitrogen atoms are identified to coordinate with the V4+ ions at the substituent position of oxygen atoms. The p-type dopant provides the hole carriers into the d(parallel to) sub-bands, resulting in the attenuation of the interaction within V-V dimer and the narrowing of the energy band gap in M1 phase. Both aspects unanimously facilitate the depression of the MIT temperature in N-incorporated VO2. |
| 学科主题 | Chemistry; Science & Technology - Other Topics; Materials Science |
| 收录类别 | SCI |
| WOS记录号 | WOS:000337783900029 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225144]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, WH,Wang, K,Fan, LL,et al. Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2014,118(24):12837-12844. |
| APA | Zhang, WH.,Wang, K.,Fan, LL.,Liu, LY.,Guo, PP.,...&吴自玉.(2014).Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films.JOURNAL OF PHYSICAL CHEMISTRY C,118(24),12837-12844. |
| MLA | Zhang, WH,et al."Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films".JOURNAL OF PHYSICAL CHEMISTRY C 118.24(2014):12837-12844. |
入库方式： OAI收割
来源：高能物理研究所
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