中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN

文献类型:期刊论文

作者Cheng, J; Zhou, J; 徐伟; Xu, W; Dong, P
刊名MODERN PHYSICS LETTERS B
出版日期2014
卷号28期号:4页码:1450031
关键词Diluted magnetic semiconductors Fe-doped GaN first principles calculation ferromagnetism
英文摘要In this paper, we present a first principle investigation on Fe-doped GaN with wurtzite and zinc-blend structure using full potential density functional calculations. Data point out that the magnetic behavior of Fe-doped GaN system is strongly dependent on Fe doping configurations. In agreement with the experimental reports, and independently by doping, antiferromagnetism occurs in the zinc-blend structure, while in the wurtzite structure ferromagnetism depends on the Fe doping configurations. Detailed analyses combined with density of state calculations support the assignment that the ferromagnetism is closely related to the impurity band at the origin of the hybridization of Fe 3d and N 2p states in the Fe-doped GaN of wurtzite phase.
学科主题Physics
收录类别SCI
WOS记录号WOS:000331280400010
公开日期2016-05-03
源URL[http://ir.ihep.ac.cn/handle/311005/225185]  
专题高能物理研究所_多学科研究中心
推荐引用方式
GB/T 7714
Cheng, J,Zhou, J,徐伟; Xu, W,et al. AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN[J]. MODERN PHYSICS LETTERS B,2014,28(4):1450031.
APA Cheng, J,Zhou, J,徐伟; Xu, W,&Dong, P.(2014).AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN.MODERN PHYSICS LETTERS B,28(4),1450031.
MLA Cheng, J,et al."AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN".MODERN PHYSICS LETTERS B 28.4(2014):1450031.

入库方式: OAI收割

来源:高能物理研究所

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