A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)
文献类型：期刊论文
| 作者 | Yue, DM; Cui, RL; Ruan, XL; Huang, H; Guo, XH; Wang, ZZ; Gao, XF; Yang, SY; Dong, JQ; Yi, FT |
| 刊名 | ORGANIC ELECTRONICS
 |
| 出版日期 | 2014 |
| 卷号 | 15期号:12页码:3482-3486 |
| 关键词 | Metallofullerene Nanoparticle PVK Organic memory DFT calculation Charge transfer |
| 英文摘要 | The ITO/Gd@C-82-PVK/Al sandwich nonvolatile memory device was developed based on polymer containing carbazole moieties as electron donors and Gd@C-82 as electron acceptors for the first time. The results of I-V characteristic test indicated that the new material exhibited typical bistable electrical switching and a nonvolatile rewritable memory effect, with a turn-on voltage of about -1.5 V and an ON/OFF-state current ratio of more than 10(4). We propose that such a low turn-on voltage is caused due to the encaged metal and the DFT calculation indicated that the encaged metal served as an important electron trapping center, which facilitated the arrival of turn-on voltage. (C) 2014 Elsevier B.V. All rights reserved. |
| 学科主题 | Materials Science; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000345649200010 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225241]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yue, DM,Cui, RL,Ruan, XL,et al. A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)[J]. ORGANIC ELECTRONICS,2014,15(12):3482-3486. |
| APA | Yue, DM.,Cui, RL.,Ruan, XL.,Huang, H.,Guo, XH.,...&孙宝云.(2014).A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK).ORGANIC ELECTRONICS,15(12),3482-3486. |
| MLA | Yue, DM,et al."A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)".ORGANIC ELECTRONICS 15.12(2014):3482-3486. |
入库方式： OAI收割
来源：高能物理研究所
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