Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy
文献类型：期刊论文
| 作者 | Dai, YB; Shao, YL; Wu, YZ; Hao, XP; Zhang, P; Cao, XZ; Zhang, L; Tian, Y; Zhang, HD;张鹏(正); Cao XZ(曹兴忠)
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| 刊名 | RSC ADVANCES
 |
| 出版日期 | 2014 |
| 卷号 | 4期号:41页码:21504-21509 |
| 英文摘要 | GaN crystals were grown on MOCVD-GaN/Al2O3 templates (MGA) and MOCVD-GaN/6H-SiC templates (MGS) in a hydride vapour phase epitaxy (HVPE) process where the V/III ratio was controlled. The tensile stress that exists in MGS was controlled by an increasing V/III ratio. The compressive stress that appears in MGA was controlled by a decreasing V/III ratio. The mechanism of stress control using the V/III ratio is discussed in terms of the interrelation of the stress, the V/III ratio and the crystal growth. The stress in these two kinds of substrates causes differences in atomic mobility which may be compensated by varying the V/III ratio. It is found that a larger V/III ratio results in a higher atomic mobility. Thus, atomic mobility is retarded by compressive stress and increased by tensile stress. This method of stress control has been shown to provide worthwhile guidance for GaN growth on different templates, and under different conditions in other investigations. |
| 学科主题 | Chemistry |
| 收录类别 | SCI |
| WOS记录号 | WOS:000336837100044 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225346]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Dai, YB,Shao, YL,Wu, YZ,et al. Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy[J]. RSC ADVANCES,2014,4(41):21504-21509. |
| APA | Dai, YB.,Shao, YL.,Wu, YZ.,Hao, XP.,Zhang, P.,...&曹兴忠.(2014).Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy.RSC ADVANCES,4(41),21504-21509. |
| MLA | Dai, YB,et al."Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy".RSC ADVANCES 4.41(2014):21504-21509. |
入库方式： OAI收割
来源：高能物理研究所
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