A novel porous substrate for the growth of high quality GaN crystals by HVPE
文献类型：期刊论文
| 作者 | Dai, YB; Wu, YZ; Zhang, L; Shao, YL; Tian, Y; Huo, Q; Zhang, P; Cao, XZ; Hao, XP;张鹏(正); Cao XZ(曹兴忠)
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| 刊名 | RSC ADVANCES
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| 出版日期 | 2014 |
| 卷号 | 4期号:66页码:35106-35111 |
| 英文摘要 | An original high temperature annealing (HTA) technology has been established to fabricate a porous substrate with a layer of inverted pyramid structures. The details about the formation of the porous substrate and the related mechanism were discussed. It was proved that the porous structures were formed through an etching-like mechanism assisted by SiO2 patterned masks. High-quality GaN crystals have been prepared using the as-prepared porous substrate. The growth experiments demonstrated that such porous substrates were mechanically fragile. The porous structures are suitable to be used as a release layer for the growth of GaN crystals with low stress and defect density. |
| 学科主题 | Chemistry |
| 收录类别 | SCI |
| WOS记录号 | WOS:000341287700049 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225351]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Dai, YB,Wu, YZ,Zhang, L,et al. A novel porous substrate for the growth of high quality GaN crystals by HVPE[J]. RSC ADVANCES,2014,4(66):35106-35111. |
| APA | Dai, YB.,Wu, YZ.,Zhang, L.,Shao, YL.,Tian, Y.,...&曹兴忠.(2014).A novel porous substrate for the growth of high quality GaN crystals by HVPE.RSC ADVANCES,4(66),35106-35111. |
| MLA | Dai, YB,et al."A novel porous substrate for the growth of high quality GaN crystals by HVPE".RSC ADVANCES 4.66(2014):35106-35111. |
入库方式： OAI收割
来源：高能物理研究所
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