Experiment on hard X-rays damage effects for memory
文献类型：期刊论文
| 作者 | Guo, HX; Han, FB; Chen, YS; Luo, JH; Gong, JC; Xie, YN; Huang, YY; He, W; Hu, TD; Xie YN(谢亚宁)
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| 刊名 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
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| 出版日期 | 2003 |
| 卷号 | 27页码:5-9 |
| 关键词 | floating ROMs SRAM dose enhancement effects synchrotron radiation |
| 其他题名 | 存储器硬X射线损伤效应实验 |
| 通讯作者 | Guo, HX (reprint author), NW Inst Nucl Technol, Xian 710024, Peoples R China. |
| 英文摘要 | Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration front 16k to 4M irradiated by 20-100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source,gamma-rays. The ratio of radiation damage to the them irradiated with two sources are measured. The relationship of radiation hardness of SRAM versus different integration for gamma-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Nuclear ; Physics, Particles & Fields |
| 收录类别 | SCI |
| WOS记录号 | WOS:000220592300002 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225455]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Guo, HX,Han, FB,Chen, YS,et al. Experiment on hard X-rays damage effects for memory[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27:5-9. |
| APA | Guo, HX.,Han, FB.,Chen, YS.,Luo, JH.,Gong, JC.,...&胡天斗.(2003).Experiment on hard X-rays damage effects for memory.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27,5-9. |
| MLA | Guo, HX,et al."Experiment on hard X-rays damage effects for memory".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27(2003):5-9. |
入库方式： OAI收割
来源：高能物理研究所
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