中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy

文献类型:期刊论文

作者Tang J(唐军); Tang, J; Kumashiro, R; Ju, J; Li, ZF; Avila, MA; Suekuni, K; Takabatake, T; Guo, F; Kobayashi, K
刊名CHEMICAL PHYSICS LETTERS
出版日期2009
卷号472期号:1-3页码:#REF!
通讯作者Tang, J (reprint author), Tohoku Univ, Dept Phys, Grad Sch Sci, 6-3 Aoba, Sendai, Miyagi 9808578, Japan.
英文摘要The electronic properties of p- and n-type Ba8Ga16Ge30 (BGG) are studied using soft X-ray photoelectron spectroscopy at a high-energy facility. Three bands are resolved in the valence band region. The first band for n-type BGG is sensitive to temperature, while the second band is sensitive for p- type BGG. The change in the ratio of Ba to Ga, from which the carrier type is controlled in this system, modifies the positions of Ga residing at the larger (Ga-CGe)(24) cage. This modi. cation in the host network is responsible for the large differences observed in electronic properties of p- and n-BGGs in this clathrate family. (C) 2009 Elsevier B. V. All rights reserved.
学科主题Chemistry; Physics
类目[WOS]Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
收录类别SCI
WOS记录号WOS:000264637800011
公开日期2016-05-03
源URL[http://ir.ihep.ac.cn/handle/311005/225826]  
专题高能物理研究所_多学科研究中心
推荐引用方式
GB/T 7714
Tang J,Tang, J,Kumashiro, R,et al. p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy[J]. CHEMICAL PHYSICS LETTERS,2009,472(1-3):#REF!.
APA 唐军.,Tang, J.,Kumashiro, R.,Ju, J.,Li, ZF.,...&Tanigaki, K.(2009).p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy.CHEMICAL PHYSICS LETTERS,472(1-3),#REF!.
MLA 唐军,et al."p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy".CHEMICAL PHYSICS LETTERS 472.1-3(2009):#REF!.

入库方式: OAI收割

来源:高能物理研究所

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