p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy
文献类型:期刊论文
作者 | Tang J(唐军); Tang, J; Kumashiro, R; Ju, J; Li, ZF; Avila, MA; Suekuni, K; Takabatake, T; Guo, F; Kobayashi, K |
刊名 | CHEMICAL PHYSICS LETTERS
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出版日期 | 2009 |
卷号 | 472期号:1-3页码:#REF! |
通讯作者 | Tang, J (reprint author), Tohoku Univ, Dept Phys, Grad Sch Sci, 6-3 Aoba, Sendai, Miyagi 9808578, Japan. |
英文摘要 | The electronic properties of p- and n-type Ba8Ga16Ge30 (BGG) are studied using soft X-ray photoelectron spectroscopy at a high-energy facility. Three bands are resolved in the valence band region. The first band for n-type BGG is sensitive to temperature, while the second band is sensitive for p- type BGG. The change in the ratio of Ba to Ga, from which the carrier type is controlled in this system, modifies the positions of Ga residing at the larger (Ga-CGe)(24) cage. This modi. cation in the host network is responsible for the large differences observed in electronic properties of p- and n-BGGs in this clathrate family. (C) 2009 Elsevier B. V. All rights reserved. |
学科主题 | Chemistry; Physics |
类目[WOS] | Chemistry, Physical ; Physics, Atomic, Molecular & Chemical |
收录类别 | SCI |
WOS记录号 | WOS:000264637800011 |
公开日期 | 2016-05-03 |
源URL | [http://ir.ihep.ac.cn/handle/311005/225826] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
推荐引用方式 GB/T 7714 | Tang J,Tang, J,Kumashiro, R,et al. p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy[J]. CHEMICAL PHYSICS LETTERS,2009,472(1-3):#REF!. |
APA | 唐军.,Tang, J.,Kumashiro, R.,Ju, J.,Li, ZF.,...&Tanigaki, K.(2009).p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy.CHEMICAL PHYSICS LETTERS,472(1-3),#REF!. |
MLA | 唐军,et al."p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy".CHEMICAL PHYSICS LETTERS 472.1-3(2009):#REF!. |
入库方式: OAI收割
来源:高能物理研究所
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