X-ray lithography technology for the fabrication of deep-submicron T-shaped gate
文献类型：期刊论文
| 作者 | Xie, CQ; Chen, DP; Li, B; Wang, DQ; Ye, TC; Peng, LQ; Yi, F; Han, Y; Zhanng, JF; Peng LQ(彭良强) |
| 刊名 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
 |
| 出版日期 | 2003 |
| 卷号 | 27页码:#REF! |
| 关键词 | X-ray lithography X-ray mask deep-submicron T-shaped gate blur |
| 其他题名 | 制作深亚微米T型栅的X射线技术 |
| 通讯作者 | Xie, CQ (reprint author), CAS, Microelect R&D Ctr, Beijing 100029, Peoples R China. |
| 英文摘要 | Because of its validity in reducing transistor noise due to gate parasitic resistance T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely, X-ray lithography is the best way to fabricate deep-submicron T-shaped structure, because it has many advantages, such as large process latitude,high throughput, extremely long depth of focus,large exposure field sizes, low cost,and so on, and the more important thing is that X-ray lithography technology is relatively mature. In this paper, the home-made X-ray mask process is introduced first, and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed, the three layer resist method which is used for the fabrication of deep -submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Nuclear ; Physics, Particles & Fields |
| 收录类别 | SCI |
| WOS记录号 | WOS:000220592300027 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/226281]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Xie, CQ,Chen, DP,Li, B,et al. X-ray lithography technology for the fabrication of deep-submicron T-shaped gate[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27:#REF!. |
| APA | Xie, CQ.,Chen, DP.,Li, B.,Wang, DQ.,Ye, TC.,...&张菊芳.(2003).X-ray lithography technology for the fabrication of deep-submicron T-shaped gate.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27,#REF!. |
| MLA | Xie, CQ,et al."X-ray lithography technology for the fabrication of deep-submicron T-shaped gate".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27(2003):#REF!. |
入库方式： OAI收割
来源：高能物理研究所
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