Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD
文献类型：期刊论文
| 作者 | Zheng, XH; Feng, ZH; Wang, YT; Zheng, WL; Jia, QJ; Jiang, XM; Yang, H; Liang, JW; Zheng WL(郑文莉) ; Jia QJ(贾全杰)
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
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| 出版日期 | 2002 |
| 卷号 | 242期号:1-2页码:#REF! |
| 关键词 | nucleation layers X-ray diffraction metalorganic chemical vapor deposition gallium compounds nitrides |
| 通讯作者 | Zheng, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. |
| 英文摘要 | The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 学科主题 | Crystallography; Materials Science; Physics |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 收录类别 | SCI |
| WOS记录号 | WOS:000176729400018 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/226326]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_人力资源处 |
| 推荐引用方式 GB/T 7714 | Zheng, XH,Feng, ZH,Wang, YT,et al. Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2002,242(1-2):#REF!. |
| APA | Zheng, XH.,Feng, ZH.,Wang, YT.,Zheng, WL.,Jia, QJ.,...&姜晓明.(2002).Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD.JOURNAL OF CRYSTAL GROWTH,242(1-2),#REF!. |
| MLA | Zheng, XH,et al."Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD".JOURNAL OF CRYSTAL GROWTH 242.1-2(2002):#REF!. |
入库方式： OAI收割
来源：高能物理研究所
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