Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Chen, ZT; Xu, K; Guo, LP; Yang, ZJ; Su, YY; Yang, XL; Pan, YB; Shen, B; Zhang, H; Zhang, GY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2006 |
| 卷号 | 294期号:2页码:#REF! |
| 关键词 | rocking curve stresses threading dislocation GaN thin films |
| 通讯作者 | Zhang, GY (reprint author), Peking Univ, Sch Phys, Beijing 100871, Peoples R China. |
| 英文摘要 | Effect of long anneals on densities of different types of threading dislocations (TDs) in GaN films grown onto sapphire substrate by metal-organic chemical vapor deposition was investigated by high-resolution X-ray diffraction. The results showed that the densities of both types of TDs changed obviously but oppositely, and residual stress in the GaN films was relaxed by generating edge-type TDs instead of screw-type TDs. The results obtained from chemical etching experiments and grazing-incidence X-ray diffraction (GIXRD) also supported the proposed defect structure evolution. (c) 2006 Elsevier B.V. All rights reserved. |
| 学科主题 | Crystallography; Materials Science; Physics |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 收录类别 | SCI |
| WOS记录号 | WOS:000240707800002 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/226563]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Chen, ZT,Xu, K,Guo, LP,et al. Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2006,294(2):#REF!. |
| APA | Chen, ZT.,Xu, K.,Guo, LP.,Yang, ZJ.,Su, YY.,...&Zhang, GY.(2006).Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,294(2),#REF!. |
| MLA | Chen, ZT,et al."Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 294.2(2006):#REF!. |
入库方式： OAI收割
来源：高能物理研究所
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