中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Depth profiling of iron impurities on GaAs surfaces using total reflection X-ray fluorescence

文献类型:期刊论文

作者Fan QM(范钦敏); Liu YW(刘亚雯); Wei CL(魏诚林); Fan, QM; Liu, YW; Wei, CL
刊名FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY
出版日期1996
卷号354期号:2页码:#REF!
通讯作者Fan, QM (reprint author), ACAD SINICA,INST HIGH ENERGY PHYS,POB 2732,BEIJING 100080,PEOPLES R CHINA.
英文摘要Depth profiling of iron impurities on GaAs surfaces is performed by means of total reflection X-ray fluorescence. A numerical processing procedure presented previously is used for the evaluation of the experimental data. A detection limit of 10(11) atoms Fe/cm(2) on GaAs surfaces has been achieved.
学科主题Chemistry
类目[WOS]Chemistry, Analytical
收录类别SCI
WOS记录号WOS:A1996TR64200012
公开日期2016-05-03
源URL[http://ir.ihep.ac.cn/handle/311005/226835]  
专题高能物理研究所_多学科研究中心
推荐引用方式
GB/T 7714
Fan QM,Liu YW,Wei CL,et al. Depth profiling of iron impurities on GaAs surfaces using total reflection X-ray fluorescence[J]. FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY,1996,354(2):#REF!.
APA 范钦敏,刘亚雯,魏诚林,Fan, QM,Liu, YW,&Wei, CL.(1996).Depth profiling of iron impurities on GaAs surfaces using total reflection X-ray fluorescence.FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY,354(2),#REF!.
MLA 范钦敏,et al."Depth profiling of iron impurities on GaAs surfaces using total reflection X-ray fluorescence".FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY 354.2(1996):#REF!.

入库方式: OAI收割

来源:高能物理研究所

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