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p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy (vol 472, pg 60, 2009)

文献类型:期刊论文

作者Tang J(唐军); Tang, J; Kumashiro, R; Ju, J; Li, ZF; Avila, MA; Suekuni, K; Takabatake, T; Guo, FZ; Kobayashi, K
刊名CHEMICAL PHYSICS LETTERS
出版日期2009
卷号473期号:1-3页码:#REF!
通讯作者Tang, J (reprint author), Tohoku Univ, Grad Sch Sci Solid State Phys Nanonetwork Mat, Dept Phys, Aoba Ku, 6-3 Aoba Aramaki, Sendai, Miyagi 9808579, Japan.
学科主题Chemistry; Physics
类目[WOS]Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
收录类别SCI
WOS记录号WOS:000265270800045
公开日期2016-05-03
源URL[http://ir.ihep.ac.cn/handle/311005/226973]  
专题高能物理研究所_多学科研究中心
推荐引用方式
GB/T 7714
Tang J,Tang, J,Kumashiro, R,et al. p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy (vol 472, pg 60, 2009)[J]. CHEMICAL PHYSICS LETTERS,2009,473(1-3):#REF!.
APA 唐军.,Tang, J.,Kumashiro, R.,Ju, J.,Li, ZF.,...&Tanigaki, K.(2009).p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy (vol 472, pg 60, 2009).CHEMICAL PHYSICS LETTERS,473(1-3),#REF!.
MLA 唐军,et al."p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy (vol 472, pg 60, 2009)".CHEMICAL PHYSICS LETTERS 473.1-3(2009):#REF!.

入库方式: OAI收割

来源:高能物理研究所

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