中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study on pyrite FeS2 films deposited on Si(100) substrate by synchrotron radiation surface X-ray diffraction method

文献类型:期刊论文

作者Wan DY(万冬云); He Q(何庆); Jia QJ(贾全杰); Zhang RG(张仁刚); Zhang H(张辉); Wang BY(王宝义); Wei L(魏龙); Wan, DY; He, Q; Zhang, LP
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2004
卷号268期号:1-2页码:#REF!
关键词synchrotron radiation surface X-ray diffraction iron pyrite films semiconducting materials
通讯作者Wei, L (reprint author), Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, 10 Yuquan Rd, Beijing 100039, Peoples R China.
英文摘要. Synchrotron radiation with surface X-ray diffraction is conducted to study pyrite FeS2 films on Si (10 0) wafers. The results show that the "strong (2 0 0) reflection" for the FeS2/Si(1 0 0) sample primarily comes from the stress peak of the silicon substrate, other than the effect of the preferred orientation of pyrite crystal grains which has been assumed previously. On the contrary, the FeS2/Si(1 0 0) sample actually indicates a strong preferred growth along (3 1 1) orientation, and this preferential growth of pyrite films becomes intenser with the prolonged annealing time. (C) 2004 Elsevier B.V. All rights reserved.
学科主题Crystallography; Materials Science; Physics
类目[WOS]Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
收录类别SCI
WOS记录号WOS:000222714700035
公开日期2016-05-03
源URL[http://ir.ihep.ac.cn/handle/311005/227030]  
专题高能物理研究所_多学科研究中心
推荐引用方式
GB/T 7714
Wan DY,He Q,Jia QJ,et al. Study on pyrite FeS2 films deposited on Si(100) substrate by synchrotron radiation surface X-ray diffraction method[J]. JOURNAL OF CRYSTAL GROWTH,2004,268(1-2):#REF!.
APA 万冬云.,何庆.,贾全杰.,张仁刚.,张辉.,...&Wei, L.(2004).Study on pyrite FeS2 films deposited on Si(100) substrate by synchrotron radiation surface X-ray diffraction method.JOURNAL OF CRYSTAL GROWTH,268(1-2),#REF!.
MLA 万冬云,et al."Study on pyrite FeS2 films deposited on Si(100) substrate by synchrotron radiation surface X-ray diffraction method".JOURNAL OF CRYSTAL GROWTH 268.1-2(2004):#REF!.

入库方式: OAI收割

来源:高能物理研究所

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