Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
文献类型：期刊论文
| 作者 | Sun, YP; Fu, Y; Qu, B; Wang, YT; Feng, ZH; Shen, XM; Zhao, DG; Zheng, XH; Duan, LH; Li, BC |
| 刊名 | SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
 |
| 出版日期 | 2002 |
| 卷号 | 45期号:3页码:#REF! |
| 关键词 | wafer bonding cubic GaN/GaAs(001) Si-substrate |
| 通讯作者 | Sun, YP (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. |
| 英文摘要 | We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH(4)OH : H(2)O(2)=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa(2) and Ni(4)N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface. |
| 学科主题 | Engineering; Materials Science |
| 类目[WOS] | Engineering, Multidisciplinary ; Materials Science, Multidisciplinary |
| 收录类别 | SCI |
| WOS记录号 | WOS:000175593400004 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/227224]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_人力资源处 |
| 推荐引用方式 GB/T 7714 | Sun, YP,Fu, Y,Qu, B,et al. Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate[J]. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,2002,45(3):#REF!. |
| APA | Sun, YP.,Fu, Y.,Qu, B.,Wang, YT.,Feng, ZH.,...&贾全杰.(2002).Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate.SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,45(3),#REF!. |
| MLA | Sun, YP,et al."Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate".SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES 45.3(2002):#REF!. |
入库方式： OAI收割
来源：高能物理研究所
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