Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density
文献类型：期刊论文
| 作者 | Chen, FH; Fan, LL; Chen, S; Liao, GM; Chen, YL; Wu, P; Song, L; Zou, CW; Wu, ZY; Wu ZY(吴自玉)
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| 刊名 | ACS APPLIED MATERIALS & INTERFACES
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| 出版日期 | 2015 |
| 卷号 | 7期号:12页码:6875-6881 |
| 关键词 | vanadium dioxide p-GaN phase transition modulation carrier concentration |
| 英文摘要 | External controlling the phase transition behavior of vanadium dioxide is important to realize its practical applications as energy-efficient electronic devices. Because of its relatively high phase transition temperature of 68 degrees C, the central challenge for VO2-based electronics, lies in finding an energy efficient way, to modulate the phase transition in a reversible and reproducible manner. In this work, we report an experimental realization of p-n heterojunctions by growing VO2 film on p-type GaN substrate. By adding the bias voltage on the p-n junction, the metal-insulator transition behavior of VO2 film can be changed continuously. It is demonstrated that the phase transition of VO2 film is closely associated with the carrier distribution within the space charge region, which can be directly controlled by the bias voltage. Our findings offer novel opportunities for modulating the phase transition of VO2 film in a reversible way as well as extending the concept of electric-field modulation on other phase transition materials. |
| 学科主题 | Science & Technology - Other Topics; Materials Science |
| 类目[WOS] | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 收录类别 | SCI ; EI |
| WOS记录号 | WOS:000352246700062 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/228347]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Chen, FH,Fan, LL,Chen, S,et al. Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(12):6875-6881. |
| APA | Chen, FH.,Fan, LL.,Chen, S.,Liao, GM.,Chen, YL.,...&吴自玉.(2015).Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density.ACS APPLIED MATERIALS & INTERFACES,7(12),6875-6881. |
| MLA | Chen, FH,et al."Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density".ACS APPLIED MATERIALS & INTERFACES 7.12(2015):6875-6881. |
入库方式： OAI收割
来源：高能物理研究所
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