Nano structure evolution in P3HT:PC61BM blend films due to the effects of thermal annealing or by adding solvent
文献类型：期刊论文
| 作者 | Fan, X; Zhao, SL; Chen Y(陈雨) ; 张杰(多); Yuan MY(苑梦尧); Chen, Y; Zhang, J; Yang, QQ; Gong, W; Yuan, MY
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2015 |
| 卷号 | 24期号:7页码:78401 |
| 关键词 | polymer solar cell (PSC) additive morphology grazing incidence x-ray diffraction (GIXRD) |
| 英文摘要 | Crystallographic dynamics of blend films of regioregular poly(3-hexylthiophene) (P3HT) mixed with [6-6-]-phenyl-C61-butyric acid methyl ester (PC61BM) treated by thermal annealing or by adding solvent 1,8-diiodooctane (DIO) are characterized by 2D-grazing incidence x-ray diffraction (2D-GIXRD). The results show that the P3HT chains are primarily oriented with the thiophene ring edge-on to the substrate, with a small fraction of chains oriented plane-on. The interplanar spacing becomes narrow after being treated by DIO, and the coherence length of the P3HT crystallites increases after being treated by thermal annealing or DIO, which is accompanied by a change in the orientation angle of the P3HT lamellae. The increased ordering of P3HT packing induced by thermal annealing or adding DIO contributes to enhanced photovoltaic performance. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 收录类别 | SCI ; EI |
| WOS记录号 | WOS:000359662600096 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/228666]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Fan, X,Zhao, SL,Chen Y,et al. Nano structure evolution in P3HT:PC61BM blend films due to the effects of thermal annealing or by adding solvent[J]. CHINESE PHYSICS B,2015,24(7):78401. |
| APA | Fan, X.,Zhao, SL.,陈雨.,张杰.,苑梦尧.,...&Xu, XR.(2015).Nano structure evolution in P3HT:PC61BM blend films due to the effects of thermal annealing or by adding solvent.CHINESE PHYSICS B,24(7),78401. |
| MLA | Fan, X,et al."Nano structure evolution in P3HT:PC61BM blend films due to the effects of thermal annealing or by adding solvent".CHINESE PHYSICS B 24.7(2015):78401. |
入库方式： OAI收割
来源：高能物理研究所
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