中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fluorescence effect of ion-implanted sapphire doped with Ag/Cu/Fe elements

文献类型:期刊论文

作者Chen, HJ; Wang, YH; Zhang, XJ; Dai, HM; Ji, LL; Wang, RW; Wang, DJ; Lu, JD; Zheng, LR; Zheng LR(郑黎荣)
刊名PHYSICA B-CONDENSED MATTER
出版日期2015
卷号476页码:96-99
关键词Fluorescence effect SPR Microstructure
英文摘要The fluorescence effect and microstructure of the nanocomposite samples prepared by ion implantation have been studied in the subsurface area. Based on the UV-vis and VUV data, the luminescence properties of implanted samples have been presented and discussed. The research indicates that the surface plasma resonance has an impact on the fluorescence effect notably. In addition, the fluorescence performance of the substrates implanted with ions is related to the outermost electron number of the injection element. And SRIM is used to analyze the energy loss in the process of ion implantation. (C) 2015 Elsevier B.V. All rights reserved.
学科主题Physics
类目[WOS]Physics, Condensed Matter
收录类别SCI ; EI
WOS记录号WOS:000362271300017
公开日期2016-05-03
源URL[http://ir.ihep.ac.cn/handle/311005/228774]  
专题中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Chen, HJ,Wang, YH,Zhang, XJ,et al. Fluorescence effect of ion-implanted sapphire doped with Ag/Cu/Fe elements[J]. PHYSICA B-CONDENSED MATTER,2015,476:96-99.
APA Chen, HJ.,Wang, YH.,Zhang, XJ.,Dai, HM.,Ji, LL.,...&郑黎荣.(2015).Fluorescence effect of ion-implanted sapphire doped with Ag/Cu/Fe elements.PHYSICA B-CONDENSED MATTER,476,96-99.
MLA Chen, HJ,et al."Fluorescence effect of ion-implanted sapphire doped with Ag/Cu/Fe elements".PHYSICA B-CONDENSED MATTER 476(2015):96-99.

入库方式: OAI收割

来源:高能物理研究所

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