Vacancy-induced room-temperature ferromagnetism in Ga-TiO2
文献类型:期刊论文
作者 | Bao, NN; Yi, JB; Fan, HM; Qin, XB; Zhang, P; Wang, BY; Ding, J; Li, S;秦秀波; 张鹏(正); Wang BY(王宝义)![]() |
刊名 | SCRIPTA MATERIALIA
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出版日期 | 2012 |
卷号 | 66期号:10页码:821-824 |
关键词 | Diluted magnetic semiconductor TiO2 Room-temperature ferromagnetism Vacancy |
英文摘要 | Ga-TiO2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
学科主题 | Science & Technology - Other Topics; Materials Science; Metallurgy & Metallurgical Engineering |
收录类别 | SCI |
WOS记录号 | WOS:000302756400026 |
公开日期 | 2016-05-03 |
源URL | [http://ir.ihep.ac.cn/handle/311005/224068] ![]() |
专题 | 高能物理研究所_核技术应用研究中心 |
推荐引用方式 GB/T 7714 | Bao, NN,Yi, JB,Fan, HM,et al. Vacancy-induced room-temperature ferromagnetism in Ga-TiO2[J]. SCRIPTA MATERIALIA,2012,66(10):821-824. |
APA | Bao, NN.,Yi, JB.,Fan, HM.,Qin, XB.,Zhang, P.,...&王宝义.(2012).Vacancy-induced room-temperature ferromagnetism in Ga-TiO2.SCRIPTA MATERIALIA,66(10),821-824. |
MLA | Bao, NN,et al."Vacancy-induced room-temperature ferromagnetism in Ga-TiO2".SCRIPTA MATERIALIA 66.10(2012):821-824. |
入库方式: OAI收割
来源:高能物理研究所
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