Microstructuring and doping of silicon with nanosecond laser pulses
文献类型：期刊论文
| 作者 | Li, XH; Chang, LY; Qiu, R; Wen, C; Li, ZH; Hu, SF;李智慧 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2012 |
| 卷号 | 258期号:20页码:8002-8007 |
| 关键词 | Silicon Nanosecond laser pulse Microstructuring Doping Optical properties Electronic properties |
| 英文摘要 | We microstructure and dope silicon surfaces in SF6 atmosphere using nanosecond Nd:YAG laser pulses. The effects of scanning speed and laser pulse energy on surface morphology, optical and electronic properties of laser treated silicon are studied. When the scanning speed is 0.2 mm/s and the laser energy is 290 mJ, the absorptance of microstructured silicon can reach 90% in the visible spectrum and 80% in the infrared spectrum. In addition, its Hall mobility is measured as about 600 cm(2) V-1 s(-1). The electron diffraction shows that the irradiated silicon surface is crystalline and no disordered surface layer is found, which is good for optoelectronic applications. (c) 2012 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry; Materials Science; Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000305940700033 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224303]  |
| 专题 | 高能物理研究所_加速器中心 |
| 推荐引用方式 GB/T 7714 | Li, XH,Chang, LY,Qiu, R,et al. Microstructuring and doping of silicon with nanosecond laser pulses[J]. APPLIED SURFACE SCIENCE,2012,258(20):8002-8007. |
| APA | Li, XH,Chang, LY,Qiu, R,Wen, C,Li, ZH,&Hu, SF；李智慧.(2012).Microstructuring and doping of silicon with nanosecond laser pulses.APPLIED SURFACE SCIENCE,258(20),8002-8007. |
| MLA | Li, XH,et al."Microstructuring and doping of silicon with nanosecond laser pulses".APPLIED SURFACE SCIENCE 258.20(2012):8002-8007. |
入库方式： OAI收割
来源：高能物理研究所
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